Engineering and probing atomic quantum defects in 2D semiconductors: A perspective

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered a key materials class to scale microelectronics to the ultimate atomic level. The robust quantum properties in TMDs also enable new device concepts that promise to push quantum technologies beyond cryogenic environments. Mission-critical capabilities toward realizing these goals are the mitigation of accidental lattice imperfections and the deterministic generation of desirable defects. In this Perspective, the authors review some of their recent results on engineering and probing atomic point defects in 2D TMDs. Furthermore, we provide a personal outlook on the next frontiers in this fast evolving field. Published under an exclusive license by AIP Publishing.

Automated summary

Semiconducting 2D transition metal dichalcogenides are essential in scaling microelectronics to atomic level, with quantum properties enabling new device concepts. Key goals include addressing lattice imperfections and generating desirable defects in a deterministic manner. Researchers reviewed recent results on atomic point defects and discussed the future frontiers in this rapidly evolving field.