Effect of chemical doping on memristive behavior of VO2 microcrystals

Strongly correlated oxides, such as vanadium dioxide that undergoes a sharp metal-insulator transition when triggered by different stimuli, are of high relevance for novel electronic devices. In this work, we show the variation in threshold voltage of memristor behavior with systematic doping of tungsten (W) in VO2 crystals grown by the vapor transport method. Chemical doping effects on metal insulator transition are further correlated with Raman spectroscopy studies and differential scanning calorimetry studies. Furthermore, bi-polar threshold switching of VO2 memristor behavior is demonstrated in VO2 microcrystals with different contents of W. Threshold voltage for electrical triggering in W doped VO2 is reduced to about 0.547V from 2.27V of undoped VO2. Published under an exclusive license by AIP Publishing.

Automated summary

This work investigates the variation in threshold voltage of memristor behavior in tungsten-doped VO2 crystals. The effects of chemical doping on the metal-insulator transition are studied through Raman spectroscopy and differential scanning calorimetry. Additionally, the bi-polar threshold switching of VO2 memristor behavior is demonstrated in microcrystals with different contents of tungsten.