Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

In this Letter, we discuss AlGaN/GaN HEMTs integrated with high permittivity BaTiO3 dielectric to enable enhanced breakdown characteristics. We show that using high permittivity BaTiO3 dielectric layers in the gate and drain access regions prevents premature gate breakdown, leading to average breakdown fields exceeding 3 MV/cm at a gate-to-drain spacing of 4 mu m. The higher breakdown fields enable a high power figure of merit above 2.4 GW/cm(2) in devices with a gate-to-drain spacing of 6 mu m. This work demonstrates that electrostatic engineering using high-permittivity dielectrics can enable AlGaN/GaN HEMTs in approaching the material breakdown field limits.

Automated summary

In this study, AlGaN/GaN HEMTs integrated with high permittivity BaTiO3 dielectric were discussed to enhance the breakdown characteristics. The use of high permittivity BaTiO3 dielectric layers prevented premature gate breakdown and enabled higher breakdown fields, leading to devices with high power figure of merit. This work demonstrates that electrostatic engineering with high-permittivity dielectrics can push AlGaN/GaN HEMTs closer to material breakdown field limits.