The role of surface pretreatment by low temperature O2 gas annealing for β-Ga2O3 Schottky barrier diodes

beta-Ga2O3 based Schottky barrier diodes (SBDs) with low temperature O-2 gas annealing pretreatment is investigated. Improved electrical performance and uniformity are seen, which is expected that oxygen vacancies at the surface are passivated and Schottky barrier height (SBH) is lowered upon this pretreatment. The mechanism is interrogated by x-ray photoelectron spectroscope (XPS) measurements and first-principles modeling. The SBH lowering is consistent with the change in the interface dipole at the W/Ga2O3 interface, as evidenced by XPS results. The first principles modeling explained that SBH decrease is caused by the V-O elimination. This work shows an effective approach to engineering the interface with improved electrical performance of beta-Ga2O3 SBDs.

Automated summary

This study investigates the improvement of electrical performance in beta-Ga2O3 based Schottky barrier diodes (SBDs) through low temperature O-2 gas annealing pretreatment. The results show improved electrical performance and uniformity, indicating that passivation of oxygen vacancies at the surface and lowering of Schottky barrier height (SBH) occur during this pretreatment. X-ray photoelectron spectroscopy (XPS) measurements and first-principles modeling provide insights into the mechanism, revealing that the SBH lowering is consistent with the change in interface dipole at the W/Ga2O3 interface and is caused by the elimination of V-O. This work demonstrates an effective approach to enhance the electrical performance of beta-Ga2O3 SBDs by engineering the interface.