Influence of collector doping setback in the quantum transport characteristics of GaN/AlN resonant tunneling diodes

Harnessing resonant tunneling transport in III-nitride semiconductors to boost the operating frequencies of electronic and photonic devices, requires a thorough understanding of the mechanisms that limit coherent tunneling injection. Towards this goal, we present a concerted experimental and theoretical study that elucidates the impact of the collector doping setback on the quantum transport characteristics of GaN/AlN resonant tunneling diodes (RTDs). Employing our analytical model for polar RTDs, we quantify the width of the resonant-tunneling line shape, demonstrating that the setback helps preserve coherent injection. This design results in consistently higher peak-to-valley-current ratios (PVCRs), obtaining a maximum PVCR = 2.01 at cryogenic temperatures.

Automated summary

This study demonstrates the impact of collector doping setback on the quantum transport characteristics of GaN/AlN resonant tunneling diodes (RTDs), highlighting the importance of setback in preserving coherent injection and achieving higher peak-to-valley current ratios. The design results in consistently higher PVCRs, with a maximum PVCR = 2.01 obtained at cryogenic temperatures.