4.5 Article

Role of metal impurities in multicrystalline silicon solar cell degradation

Journal

APPLIED PHYSICS EXPRESS
Volume 14, Issue 11, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.35848/1882-0786/ac2ae6

Keywords

photovoltaics; multi-crystalline silicon (mc-Si); light and elevated temperature-induced degradation (LeTID); metal impurity; electrically active defect

Funding

  1. National Natural Science Foundation of China [62025403, 61974129, 61721005]
  2. Research council of Norway (Norges Forskningsrad) [261574]

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The study found significant correlations between the formation/dissociation of metal precipitates and the appearance of electronic states during LeTID evolution, as well as the co-localization of iron re-precipitation with copper atom agglomerations. This sheds light on potential mechanisms that enhance metal redistributions in mc-Si during LeTID.
Controlling light- and elevated temperature-induced degradation (LeTID) is one of the great challenges in silicon photovoltaics industry. Here, we performed systematic high-resolution elemental mapping and spectroscopic electrical measurements in multi-crystalline silicon wafers that underwent standard solar cell processing during LeTID. The prominent correlations between the metal precipitate formation/dissociation steps and the appearance of band-like or localized electronic states during LeTID evolution were observed. Of note, the re-precipitation of iron was found to co-localize with copper atom agglomerations. Finally, we discuss the potential mechanisms that enhance metal redistributions in mc-Si during LeTID in the context of the existing literature.

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