Insulator-to-semiconductor conversion of solution-processed ultra-wide bandgap amorphous gallium oxide via hydrogen annealing

Developing semiconducting solution-processed ultra-wide bandgap amorphous oxide semiconductor is an emerging area of research interest. However, obtaining electrical conduction on it is quite challenging. Here, we demonstrate the insulator-to-semiconductor conversion of solution-processed a-Ga2O (x) (E (g) similar to 4.8 eV) through hydrogen annealing. The successful conversion was reflected by the switching thin-film transistor with saturation mobility of 10(-2) cm(2) V(-1)s(-1). We showed that H incorporated after hydrogen annealing acts as a shallow donor which increased the carrier concentration and shifted the Fermi level (E (F)) closer to the conduction band minimum.

Automated summary

Developing solution-processed ultra-wide bandgap amorphous oxide semiconductor is a challenging task. In this study, we successfully converted a-Ga2O(x) from an insulator to a semiconductor through hydrogen annealing, which was reflected by the performance of the thin-film transistor. The incorporation of hydrogen acted as a shallow donor and increased the carrier concentration.