Journal
APPLIED PHYSICS EXPRESS
Volume 15, Issue 3, Pages -Publisher
IOP Publishing Ltd
DOI: 10.35848/1882-0786/ac5725
Keywords
magnetoelastic effect; pressure detector; spintronics device
Categories
Funding
- JSPS KAKENHI from JSPS [20J20952, 19H00860, 17J03125, 21K18827]
- JST A-Step [JPMJTR20T7]
- JST CREST [JPMJCR20C6]
- Asahi Glass Foundation
- Spintronics Research Network of Japan
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Researchers have fabricated a spin valve structure with a Pd/Co-based film and demonstrated a controllable spin reorientation transition by applying strain, resulting in a drastic change in the magnetoresistance curve.
We fabricated a Pd/Co-based spin valve structure, which has in-plane (IP) free and out-of-plane (OOP) fixed layers, on a flexible substrate. By applying %-order biaxial tensile strain to the substrate, a spin reorientation transition from IP to OOP occurs in the free layer, resulting in a drastic change in the shape of the magnetoresistance curve. This change is reversible with increasing and decreasing strain. We suggest that our system could be utilized as an in-plane direction-independent strain sensor and as a pressure detector.
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