Room temperature fabrication and post-annealing treatment of amorphous Ga2O3 photodetectors for deep-ultraviolet light detection

This work fabricates deep-ultraviolet (DUV) photodetectors (PDs) with a metal-semiconductor-metal structure based on radio-frequency sputtered amorphous Ga2O3 films at room temperature. The Ga2O3-based PD exhibits a low dark current of 1.41 x 10(-11 )A, a responsivity of 1.77 A W-1 and a fast rise response time of 114 ms. A series of annealing treatments with different atmospheres have been found effective to reduce the oxygen vacancy concentration, exhibiting a trade-off effect between the responsivity and the response time. These results demonstrate a cost-effective room-temperature approach for fabricating amorphous Ga2O3-based PDs and developing possible post-synthetic methods for tuning the PD performance.

Automated summary

This study fabricates metal-semiconductor-metal structure deep-ultraviolet photodetectors using radio-frequency sputtered amorphous Ga2O3 films at room temperature. The detectors show low dark current, high responsivity, and fast response time, and the annealing treatments are effective in improving the detector performance, showing a low-cost approach for fabrication and post-synthetic tuning.