Journal
APPLIED PHYSICS EXPRESS
Volume 15, Issue 2, Pages -Publisher
IOP Publishing Ltd
DOI: 10.35848/1882-0786/ac4a13
Keywords
terahertz wave; detector; SiC platform; FMB diode; noise equivalent power
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Funding
- Japan Science and Technology Agency [JPMJMI17F2]
- National Institute of Information and Communications Technology [0090105]
- Japan Society for the Promotion of Science [19K04517]
- Grants-in-Aid for Scientific Research [19K04517] Funding Source: KAKEN
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We have developed a novel terahertz-wave detector on a SiC platform using an InP/InGaAs FMB diode. The detector exhibits a low noise equivalent power and has successfully integrated a waveguide coupler and filters.
We developed a novel terahertz-wave detector fabricated on a SiC platform implementing an InP/InGaAs Fermi-level managed barrier (FMB) diode. The FMB diode epi-layers were transferred on a SiC substrate, and a waveguide coupler and filters were monolithically integrated with an FMB diode. Then, the fabricated detector chip was assembled in a fundamental mixer module with a WR-3 rectangular-waveguide-input port. It exhibited a minimum noise equivalent power as low as 3 x 10(-19) W Hz(-1) at around 300 GHz for a local oscillator power of only 30 mu W.
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