Related references
Note: Only part of the references are listed.Applications of lifetime distribution functions with two shape parameters for reliability analysis in advanced interconnect technologies: a brief review
Shinji Yokogawa
JAPANESE JOURNAL OF APPLIED PHYSICS (2020)
The Mu2e Experiment
Robert H. Bernstein
FRONTIERS IN PHYSICS (2019)
Identifying the First Layer to Fail in Dual-Layer SiOx/HfSiON Gate Dielectric Stacks
Andrea Padovani et al.
IEEE ELECTRON DEVICE LETTERS (2013)
New method for determining flat-band voltage in high mobility semiconductors
Roy Winter et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2013)
Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress
V. Iglesias et al.
APPLIED PHYSICS LETTERS (2011)
Interfacial-Layer-Driven Dielectric Degradation and Breakdown of HfSiON/SiON Gate Dielectric nMOSFETs
Do-Young Choi et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Detection of high-κ and interfacial layer breakdown using the tunneling mechanism in a dual layer dielectric stack
N. Raghavan et al.
APPLIED PHYSICS LETTERS (2009)
SiO2 interfacial layer as the origin of the breakdown of high-k dielectrics stacks
M. Rafik et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2009)
A compact model for oxide breakdown failure distribution in ultrathin oxides showing progressive breakdown
Santi Tons et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Dielectric breakdown mechanisms in gate oxides
S Lombardo et al.
JOURNAL OF APPLIED PHYSICS (2005)
Electronic state characterization of SiOx thin films prepared by evaporation -: art. no. 113714
A Barranco et al.
JOURNAL OF APPLIED PHYSICS (2005)
Low Weibull slope of breakdown distributions in high-k layers
T Kauerauf et al.
IEEE ELECTRON DEVICE LETTERS (2002)
Share Paper
