Journal
APPLIED PHYSICS EXPRESS
Volume 14, Issue 11, Pages -Publisher
IOP Publishing Ltd
DOI: 10.35848/1882-0786/ac32a7
Keywords
Nanowire; Molecular Beam Epitaxy; Dilute Nitrides; Dilute Bismides; Telecommunication wavelength
Categories
Funding
- KAKENHI [16H05970, 19H00855, 21KK0068]
- Japan Society of Promotion of Science
- Royal Academy of Engineering under the Research Fellowships scheme
- Swedish Research Council [2019-04312]
- Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]
- Grants-in-Aid for Scientific Research [19H00855, 21KK0068] Funding Source: KAKEN
- Swedish Research Council [2019-04312] Funding Source: Swedish Research Council
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GaAs/GaNAsBi/GaAs core-multishell nanowires were successfully grown on Si(111) substrates, with a GaNAsBi shell containing N and Bi and having a compressive lattice mismatch of less than 0.2%, resulting in room-temperature photoluminescence at around 1300 nm.
GaAs/GaNAsBi/GaAs core-multishell nanowires were grown using molecular beam epitaxy on Si(111) substrates. The formation of the 20 nm wide GaNAsBi shell with a regular hexagonal structure was observed. The shell is estimated to contain approximately 1.5% N and 2.6% Bi and has a compressive lattice mismatch of less than 0.2% with GaAs layers. The strain mediation by the introduction of both N and Bi suppresses the crystalline deformation, resulting in the clear formation of the GaNAsBi shell. Thus, we obtained room-temperature photoluminescence with the maximum position at approximately 1300 nm from the GaAs/GaNAsBi/GaAs core-multishell nanowires.
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