4.7 Article

Narrow Spectral Linewidth Silicon Photonic Wavelength Tunable Laser Diode for Digital Coherent Communication System

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2016.2559418

Keywords

Silicon photonics; semiconductor laser; resonator filters

Funding

  1. Japan Society for the Promotion of Science [25420312]
  2. Adaptable & Seamless Technology Transfer Program through target-driven R&D (A-STEP), Japan Science and Technology Agency [AS2715016R]
  3. Strategic Information and Communications R&D Promotion Program (SCOPE), Ministry of Internal Affairs, Japan [142102003]
  4. Grants-in-Aid for Scientific Research [25420312] Funding Source: KAKEN

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We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm x 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed.

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