4.8 Article

Highly Efficient Light-Emitting Diodes Based on an Organic Antimony(III) Halide Hybrid

Journal

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
Volume 61, Issue 6, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.202113450

Keywords

OLED; Organic metal halide hybrid; Self-trapped emission; Zero-dimension

Funding

  1. National Natural Science Foundation of China [22175181, 92061202, 21531008]
  2. Fujian Science and Technology Project [2020L3022]
  3. Strategic Priority Research Program of Chinese Academy of Sciences [XDB20000000]

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Lead-free organic antimony(III) halides with zero-dimensional structure demonstrate promising potential in optoelectronic applications due to their exceptional optical properties. The electrically driven organic light-emitting diodes (OLEDs) based on these materials show significant improvement in luminance, current efficiency, and external quantum efficiency compared to non-doped devices, attributed to enhanced surface morphology and balanced carrier transport in the light-emitting layers.
As low-dimensional lead-free hybrids with higher stability and lower toxicity than those of three-dimensional lead perovskites, organic antimony(III) halides show great application potential in opt-electronic field owing to diverse topologies along with exceptional optical properties. We report herein an antimony(III) hybrid (MePPh3)(2)SbCl5 with a zero-dimensional (0D) structure, which exhibits brilliant orange emission peaked at 593 nm with near-unity photoluminescent quantum yield (99.4 %). The characterization of photophysical properties demonstrates that the broadband emission with a microsecond lifetime (3.24 mu s) arises from self-trapped emission (STE). Electrically driven organic light-emitting diodes (OLEDs) based on neat and doped films of (MePPh3)(2)SbCl5 were fabricated. The doped devices show significant improvement in comparison to non-doped OLEDs. Owing to the much improved surface morphology and balanced carrier transport in light-emitting layers of doped devices, the peak luminance, current efficiency (CE) and external quantum efficiency (EQE) are boosted from 82 cd m(-2) to 3500 cd m(-2), 1.1 cd A(-1) to 6.8 cd A(-1), and 0.7 % to 3.1 % relative to non-doped devices, respectively.

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