Memcapacitor emulator using VDTA-memristor

In the literature, previously various circuits have been presented on the design of the memcapacitor. Instead of designing a new memcapacitor, we can transform an existing memristor into a memcapacitor by utilizing a mutator circuit. In this study, firstly, a VDTA-based mutator structure was designed. Then, using an existing VDTA-memristor and a new VDTA-based mutator structure, a memcapacitor circuit is proposed. A transconductance gain (g(m)) is required due to the constitutive relations of memristor and memcapacitor to operate the mutator structure. In similar mutator structures, external circuit elements are used to obtain this g(m) value. However, contrary to counterparts, the g(m) value in the proposed circuit is presented in the internal structure of the VDTA circuit element. The proposed circuit is divided into two parts presumptively, where the first structure is called the mutator circuit and the second structure is the memristor circuit. These two structures fully represent the memcapacitor. There are one VDTA and one capacitor in both parts that constitute this memcapacitor circuit. The mutator structure has an internal g(m) value. It also consists of a single VDTA and one capacitor, and the memcapacitance value, which can be electronically controlled. The proposed mutator structure is superior to its counterparts thanks to these advantages. In addition, the memcapacitor emulator circuit was experimentally made using off-the-shelf devices.

Automated summary

This study proposes a method to transform an existing memristor into a memcapacitor using a mutator circuit based on VDTA. A memcapacitor circuit is designed by combining a VDTA-memristor and the new mutator structure. The proposed circuit has an internal transconductance gain and allows electronic control of the memcapacitance value.