Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 4, Pages 422-425Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2525761
Keywords
Amorphous indium-gallium-zinc-oxide (a-IGZO); tin oxides (SnOx); thin-film transistor; inverter; capping layer
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Funding
- National Basic Research Program of China [2012CB933003]
- National Natural Science Foundation of China [61474126]
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Tunable threshold voltage of a thin-film transistor (TFT) is highly desirable for designing multifunctional electronic circuits. In this letter, an ultrathin SnOx capping layer was adopted to modify the threshold voltage of bottom-gate amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs. A threshold voltage shift from 15.2 to -9.0 V was observed as the SnOx thicknesses increased from 0 to 19 nm, accompanying by a sizable increase of the intrinsic electron concentration in the channel layer. It was believed that the SnOx capping layer can extract loosely bound oxygen from the a-IGZO, which was supported by the SnOx composition variation with its thickness. Combining an uncovered a-IGZO TFT with a SnOx capped a-IGZO TFT, an enhancement/depletion inverter with a voltage gain of up to 45.9 was successfully demonstrated.
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