Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 5, Pages 629-632Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2540164
Keywords
GaN; high electron mobility transistor (HEMT); high-power; InAlN/GaN; Ka-band; microwave
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Funding
- Delegation Generale pour l'Armement through European Commission
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High-frequency Metal Insulator Semiconductor High-Electron-Mobility Transistors (MIS HEMTs) were fabricated on quaternary InAlGaN/AlN/GaN heterostructures, grown by MOCVD on a 3 SiC substrate. Specific studies were performed on SiN ICP-CVD passivation layers. Improved performances were obtained with these optimized devices at 30 GHz as evidenced by CW Load Pull characterization: an output power of 6 W/mm and a power-added efficiency of 42%. A good extrinsic transconductance value higher than 450 mS/mm and a current density up to 1.55 A/mm were also measured on these transistors.
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