Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 12, Pages 1617-1620Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2617381
Keywords
Normally-OFF; GaN MIS-HEMTs; ultra-thin-barrier AlGaN/GaN heterostructure; LPCVD-SINx passivation
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Funding
- Natural Science Foundation of China [61474138, 61404163, 61534007, 61527816, 11634002]
- Chinese Academy of Sciences [QYZDB-SSW-JSC012]
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
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Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). The sheet resistance of 2-D electron gas in the UTB Al0.22Ga0.78N(5-nm)/GaN heterostructure is effectively reduced by SiNx passivation grown by low-pressure chemical vapor deposition, from 2570 to 334 Omega/square. The fabricated Al2O3/AlGaN/GaN MIS-HEMTs exhibit normally-OFF behavior with good V-TH uniformity and low V-TH-hysteresis. 20 mm-gate-width power devices featuring a low R-on of 0.75 Omega (I-D,I- MAX = 6.5 A) are also demonstrated on the platform.
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