Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 1, Pages 103-106Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2499209
Keywords
Two-dimensional materials; black phosphorus; phosphorene; MOSFET; high-K dielectrics
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Funding
- National Science Foundation (NSF) through the University of Minnesota MRSEC [DMR-1420013]
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Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multilayer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO2 gate dielectric. Before passivation, devices with 0.3-mu m gate length behaved as p-MOSFETs with peak extrinsic transconductance, gm, of 282 mu S/mu m at V-DS = -2 V. After passivation, the same devices displayed the ambipolar behavior, and when tested as n-MOSFETs, had peak g(m) = 66 mu S/mu m at V-DS = +2 V, and similar devices on the same wafer had gm as high as 80 mu S/mu m. These results are an important step toward the realization of high-performance black phosphorus complementary logic circuits.
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