Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 8, Pages 970-973Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2577046
Keywords
FinFET; high aspect ratio; metal-assisted chemical etching; junctionless; interface states; nanofabrication
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Funding
- National Science Foundation through the Civil, Mechanical and Manufacturing Innovation [14-62946]
- International Institute for Carbon-Neutral Energy Research
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1462946] Funding Source: National Science Foundation
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Junctionless FinFETs with an array of ultra-high aspect ratio (HAR) fins, enabled by inverse metal-assisted chemical etching, are developed to achieve high on-current per fin. The novel device fabrication process eliminates dry etching-induced plasma damage, high energy ion implantation damage, and subsequent high-temperature annealing thermal budget, ensuring interface quality between the high-k gate dielectric and the HAR fin channel. Indium phosphide junctionless FinFETs, of record HAR (as high as 50: 1) fins, are demonstrated for the first time with excellent subthreshold slope (63 mV/dec) and ON/OFF ratio (3 x 10(5)).
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