Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 12, Pages 1559-1562Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2622716
Keywords
Neuromorphic computing; resistive RAM; synaptic devices; TiOx
Categories
Funding
- Ministry of Science, ICT, and Future Planning through the Pioneer Research Center Program within the National Research Foundation of Korea [2012-0009460]
- National Research Foundation of Korea [2012-0009461] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
We propose TiOx-based resistive switching device for neuromorphic synapse applications. This device is capable of 64-levels conductance states because of their optimized interface between the metal electrode and the TiOx film. To compensate the change in switching power with increasing pulse number, we propose the use of fixed voltage and current pulses in potentiation and depression conditions, respectively. By adopting a hybrid pulse scheme, the symmetry of conductance change under both potentiation and depression conditions is shown to be significantly improved. Both the improved conductance levels and the symmetry of conductance change are directly related with enhanced pattern recognition accuracy, which is confirmed by a neural network simulation.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available