Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 10, Pages 1314-1317Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2598806
Keywords
GaN; HEMT; track-and-hold (T/H); analog-todigital converter (ADC); mixed-signal
Categories
Funding
- MIT GaN Energy Initiative
- ONR [N00014-12-1-0915]
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A track-and-hold sampling circuit (THSC) fabricated in gallium nitride (GaN) high-electron mobility transistor (HEMT) on silicon carbide substrate is presented for the first time, considering the impact of GaN HEMT memory effects on the sampled signal. A single-transistor GaN track-and-hold sampler with an external gate-bootstrapping sampling clock demonstrates over 100-dB signal-to-noise ratio with 700-MHz track-mode bandwidth.
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