Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 9, Pages 1112-1115Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2587899
Keywords
HfO2; OxRRAM; resistive RAM; retention
Categories
Funding
- imec through Industrial Affiliation Programme
- imec's core CMOS and Emerging Memory Program
Ask authors/readers for more resources
In this letter, we propose a novel single-cell, cycle-to-cycle based retention testing method, enabling fast statistical retention assessment on oxide-based resistive random access memory (RRAM). Detailed comparison between cycle-to-cycle and device-to-device retention testing methods is made on TiN\HfO2\Hf stack showing excellent agreement in terms of failure rate and extracted activation energy. Due to the unique properties of filamentary RRAM, this new retention testing method allows fast and cost effective retention benchmarking of different material stacks and is particularly versed in the study of the impact of programming algorithms.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available