Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 2, Pages 146-149Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2508064
Keywords
Silicon carbide; bandgap reference; BJT; high temperature integrated circuit; voltage reference
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Funding
- Swedish Foundation for Strategic Research through HOTSiC Program
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Three fully integrated bandgap voltage references (BGVRs) have been demonstrated in a 4H-SiC bipolar technology. The circuits have been characterized over a wide temperature range from 25 degrees C to 500 degrees C. The three BGVRs are functional and exhibit 46 ppm/degrees C, 131 ppm/degrees C, and 120 ppm/degrees C output voltage variations from 25 degrees C up to 500 degrees C. This letter shows that SiC bipolar BGVRs are capable of providing stable voltage references over a wide temperature range.
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