Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 12, Pages 1632-1635Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2616517
Keywords
Organic field effect transistor; n-channel transistor; interfacial layer; high electron mobility
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Funding
- National Natural Science Foundation of China [61177028]
- Natural Science Foundation of Jilin province in China [20160101256JC]
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Field-effect mobility, especially for n-channel organic field-effect transistors (OFETs), is still the most challenging issue that should be overcome for realizing commercial application of organic electronics in the near future. In this letter, we demonstrate high mobility n-channel OFETs by inserting a tetratetracontane (TTC) interfacial layer between C-60 and dielectrics. The surface morphologies of the TTC films have an important influence on the mobility of OFETs. As a result, a very high electron mobility of 13.6 cm(2)/Vs was achieved in the C-60-based OFET with a TTC passivating polyvinyl alcohol gate dielectric, which is the highest value reported to date in the C-60-based OFET devices.
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