Journal
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 4, Pages 400-403Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2016.2524450
Keywords
Resistive random access memory (RRAM); resistive switching; hafnium oxide; conductive filament
Categories
Funding
- Semiconductor Research Corporation [2249.001]
- Advanced Cyberinfrastructure Program [ACI-1053575]
- Stanford Nonvolatile Memory Research Initiative Program
- Texas Advanced Computing Center Allocation [TG-DMR110086]
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The impacts of charge trapping and filament-induced anisotropy on the resistive switching mechanism in hafnia are formulated and quantified. Using ab initio calculations, we find the energetics and kinetics of oxygen vacancies in hafnium oxide resistive random access memory are strongly influenced by charge trapping at vacancy sites as well as the local crystal structure and presence of nearby conductive filaments.
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