4.8 Article

Anisotropic Carrier Mobility from 2H WSe2

Journal

ADVANCED MATERIALS
Volume 34, Issue 7, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202108615

Keywords

2H WSe; (2); anisotropic carrier mobility; defect scattering; electronic structure; intrinsic screening layers

Funding

  1. National Natural Science Foundation of China [11704081, 52125205, U20A20166, 61805015, 61804011]
  2. Guangxi Natural Science Foundation [2017GXNSFBA198229, 2020GXNSFAA297182]
  3. Natural Science Foundation of Beijing Municipality [Z180011]
  4. Shenzhen Science and Technology Program [KQTD20170810105439418]
  5. Fundamental Research Funds for the Central Universities

Ask authors/readers for more resources

This study reports the anisotropic carrier mobility of 2H WSe2 and proposes an intrinsic screening layer to respond to the electrical anisotropy. By calculating different types of intrinsic screening layers, the electronic structures, effective masses, and scattering intensities are evaluated, leading to anisotropic mobility. This discovery offers new possibilities for adjusting the physical properties of 2H TMDCs.
Transition metal dichalcogenides (TMDCs) with 2H phase are expected to be building blocks in next-generation electronics; however, they suffer from electrical anisotropy, which is the basics for multi-terminal artificial synaptic devices, digital inverters, and anisotropic memtransistors, which are highly desired in neuromorphic computing. Herein, the anisotropic carrier mobility from 2H WSe2 is reported, where the anisotropic degree of carrier mobility spans from 0.16 to 0.95 for various WSe2 field-effect transistors under a gate voltage of -60 V. Phonon scattering, impurity ions scattering, and defect scattering are excluded for anisotropic mobility. An intrinsic screening layer is proposed and confirmed by Z-contrast scanning transmission electron microscopy (STEM) imaging to respond to the electrical anisotropy. Seven types of intrinsic screening layers are created and calculated by density functional theory to evaluate the modulated electronic structures, effective masses, and scattering intensities, resulting in anisotropic mobility. The discovery of anisotropic carrier mobility from 2H WSe2 provides a degree of freedom for adjusting the physical properties of 2H TMDCs and fertile ground for exploring and integrating TMDC electronic transistors with better performance along the direction of high mobility.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available