Using Dipole Interaction to Achieve Nonvolatile Voltage Control of Magnetism in Multiferroic Heterostructures

Nonvolatile electrical control of magnetism is crucial for developing energy-efficient magnetic memory. Based on strain-mediated magnetoelectric coupling, a multiferroic heterostructure containing an isolated magnet requires nonvolatile strain to achieve this control. However, the magnetization response of an interacting magnet to strain remains elusive. Herein, Co/MgO/CoFeB magnetic tunnel junctions (MTJs) exhibiting dipole interaction on ferroelectric substrates are fabricated. Remarkably, nonvolatile voltage control of the resistance in the MTJs is demonstrated, which originates from the nonvolatile magnetization rotation of an interacting CoFeB magnet driven by volatile voltage-generated strain. Conversely, for an isolated CoFeB magnet, this volatile strain induces volatile control of magnetism. These results reveal that the magnetization response to volatile strain among interacting magnets is different from that among isolated magnets. The findings highlight the role of dipole interaction in multiferroic heterostructures and can stimulate future research on nonvolatile electrical control of magnetism with additional interactions.

Automated summary

The nonvolatile voltage control of resistance in Co/MgO/CoFeB magnetic tunnel junctions demonstrated in this study originates from the nonvolatile magnetization rotation of an interacting CoFeB magnet driven by volatile voltage-generated strain. The findings suggest that the magnetization response to volatile strain among interacting magnets is different from that among isolated magnets.