Quasi-1D Electronic Transport in a 2D Magnetic Semiconductor

Electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor of interest because of its magnetic properties, is investigated. An extremely pronounced anisotropy manifesting itself in qualitative and quantitative differences of all quantities measured along the in-plane a and b crystallographic directions is found. In particular, a qualitatively different dependence of the conductivities sigma(a) and sigma(b) on temperature and gate voltage, accompanied by orders of magnitude differences in their values (sigma(b)/sigma(a) approximate to 3 x 10(2) to 10(5) at low temperature and negative gate voltage) are observed, together with a different behavior of the longitudinal magnetoresistance in the two directions and the complete absence of the Hall effect in transverse resistance measurements. These observations appear not to be compatible with a description in terms of conventional band transport of a 2D doped semiconductor. The observed phenomenology-and unambiguous signatures of a 1D van Hove singularity detected in energy-resolved photocurrent measurements-indicate that electronic transport through CrSBr multilayers is better interpreted by considering the system as formed by weakly and incoherently coupled 1D wires, than by conventional 2D band transport. It is concluded that CrSBr is the first 2D semiconductor to show distinctly quasi-1D electronic transport properties.

Automated summary

Investigation on electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor, revealed a pronounced anisotropy along the crystallographic directions. The observed phenomenology and the detection of a 1D van Hove singularity in energy-resolved photocurrent measurements suggest that CrSBr exhibits quasi-1D electronic transport properties, unlike conventional 2D doped semiconductors.