Journal
ADVANCED MATERIALS
Volume 34, Issue 8, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202101730
Keywords
current-induced magnetization switching; energy-efficient SOT device; interface engineering; spin-orbit torque; van der Waals materials
Categories
Funding
- Samsung Advanced Institute of Technology (SAIT)
- Alexander von Humboldt Foundation Sofia Kovalevskaja Award
- German Federal Ministry of Education and Research's MINERVA ARCHES Award
- Max Planck Society
- Global Frontier Hybrid Interface Materials of the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [2013M3A6B1078872]
- Korea Basic Science Institute (National research Facilities and Equipment Center) - Ministry of Education [2020R1A6C101A202]
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [2020R1A2C2013484]
- Institute for Basic Science (IBS) through the Center for Artificial Low Dimensional Electronic Systems [IBS-R014-D1]
- National Research Foundation of Korea (NRF) through SRC [2018R1A5A6075964]
- Max Planck-POSTECH Center for Complex Phase Materials [2016K1A4A4A01922028]
- National Research Foundation of Korea (NRF) - Korean Government [2016R1A5A1008184, 2020R1C1C1013241, 2020M3H3A1100839]
- Samsung Science and Technology Foundation [SSTF-BA1702-05]
- Samsung Electronics Co., Ltd. [IO201207-07801-01]
- National Research Foundation of Korea [4199990514509, 2020R1A2C2013484, 2020R1C1C1013241, 2020M3H3A1100839, 2020R1A6C101A202, 2016R1A5A1008184] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The study explores the control of magnetization in ferromagnets using spin-orbit torque, highlighting the use of vdW topological materials WTe2 and ferromagnet Fe3GeTe2 to meet the requirements for energy-efficient spintronic devices. By engineering vdW-type materials, a significantly reduced switching current density is achieved, offering a promising approach for energy-efficient magnetization control in SOT-based spintronics.
Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency (xi) and electrical conductivity (sigma), and an efficient spin injection across a transparent interface. Herein, single crystals of the van der Waals (vdW) topological semimetal WTe2 and vdW ferromagnet Fe3GeTe2 are used to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of xi approximate to 4.6 and sigma approximate to 2.25 x 10(5) omega(-1) m(-1) for WTe2. Moreover, the significantly reduced switching current density of 3.90 x 10(6) A cm(-2) at 150 K is obtained, which is an order of magnitude smaller than those of conventional heavy-metal/ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics.
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