4.8 Article

Electrically Reconfigurable Organic Logic Gates: A Promising Perspective on a Dual-Gate Antiambipolar Transistor

Journal

ADVANCED MATERIALS
Volume 34, Issue 15, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202109491

Keywords

antiambipolar transistor; dual-gate organic transistor; negative differential transconductance; reconfigurable logic gate

Funding

  1. JSPS Kakenhi [19H00866, 21F21052]
  2. World Premier International Center (WPI) for Materials Nanoarchitectonics (MANA) of the National Institute for Materials Science (NIMS), Tsukuba, Japan
  3. Grants-in-Aid for Scientific Research [21F21052, 19H00866] Funding Source: KAKEN

Ask authors/readers for more resources

Multiple logic gate operations are achieved using a dual-gate organic antiambipolar transistor, enabling the realization of new computation architectures. This transistor exhibits a distinct feature of precisely tuned peak voltage of the drain current, based on three input signals. The device concept shows promise in surpassing the current limitations in complementary metal-oxide-semiconductor devices.
Electrically reconfigurable organic logic circuits are promising candidates for realizing new computation architectures, such as artificial intelligence and neuromorphic devices. In this study, multiple logic gate operations are attained based on a dual-gate organic antiambipolar transistor (DG-OAAT). The transistor exhibits a ?-shaped transfer curve, namely, a negative differential transconductance at room temperature. It is important to note that the peak voltage of the drain current is precisely tuned by three input signals: bottom-gate, top-gate, and drain voltages. This distinctive feature enables multiple logic gate operations with only a single DG-OAAT, which are not obtainable in conventional transistors. Five logic gate operations, which correspond to AND, OR, NAND, NOR, and XOR, are demonstrated by adjusting the bottom-gate and top-gate voltages. Moreover, varying the drain voltage makes it possible to reversibly switch two logic gates, e.g., NAND/NOR and OR/XOR. In addition, the DG-OAATs show a high degree of stability and reliability. The logic gate operations are observed even months later. The hysteresis in the transfer curves is also negligible. Thus, the device concept is promising for realizing multifunctional logic circuits with a simple transistor configuration. Hence, these findings are expected to surpass the current limitations in complementary metal-oxide-semiconductor devices.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available