4.8 Article

Room-Temperature Nonvolatile Molecular Memory Based on Partially Unzipped Nanotube

Journal

ADVANCED FUNCTIONAL MATERIALS
Volume 32, Issue 11, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202107224

Keywords

molecular magnets; non-local signals; nonvolatile memory; partially unzipped nanotubes

Funding

  1. Major Nanoprojects of Ministry of Science and Technology of China [2018YFA0208403, 2017YFA0207104]
  2. National Natural Science Foundation of China [21973021, 11874129]
  3. GBA National Institute for Nanotechnology Innovation, Guangdong, China [2020B0101020003]
  4. CAS Project for Young Scientists in Basic Research [YSBR-030]
  5. Strategic Priority Research Program of Chinese Academy of Sciences [XDB36000000, NBSDC-DB-18]

Ask authors/readers for more resources

This study introduces a novel nanostructure made of seamless junctions between semiconducting single-walled carbon nanotubes and partially unzipped segments, functioning as a nonvolatile memory at room temperature. The device displays electrical hysteresis and can be modulated by external magnetic fields, with the mechanism attributed to magnetic moments at the partially unzipped SWNT. This smaller size and high working temperature of the SWNT may lead to the development of molecular nanomagnets for practical nonvolatile memory applications.
Nonvolatile memories have attracted a lot of interest because they retain the data when the power is interrupted. Smaller size and improved performance of nonvolatile memories are pursued both for basic research and applications. In this work, a molecular wire made of seamless junctions between semiconducting single-walled carbon nanotubes (SWNT) and partially unzipped segments of the SWNTs are reported. This novel nanostructure is demonstrated to be a nonvolatile memory, which works at room temperature under atmospheric conditions. The characteristics of the device are measured with a four-terminal configuration and a non-local voltage (Vnon-local) is used as the storage signal. An electrical hysteresis of Vnon-local is observed, wherein two states with different Vnon-local can be switched by the application of an electric field through an insulating gate device structure, exhibiting nonvolatile characteristics. Vnon-local can be modulated with external magnetic fields and the mechanism of the electrical hysteresis is attributed to the magnetic moments at the partially unzipped SWNT. The smaller size of SWNT and high working temperature may lead to the development of molecular nanomagnets as nonvolatile memory devices for practical applications.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available