4.8 Article

Kitkaite NiTeSe, an Ambient-Stable Layered Dirac Semimetal with Low-Energy Type-II Fermions with Application Capabilities in Spintronics and Optoelectronics

Journal

ADVANCED FUNCTIONAL MATERIALS
Volume 31, Issue 52, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202106101

Keywords

Dirac fermions; density functional theory calculations; device implementation; surface science; topological materials

Funding

  1. State Key Program for Basic Research of China [2017YFA0305500, 2018YFA0306204]
  2. Shanghai Municipal Science and Technology Major Project [2019SHZDZX01]
  3. Science and Technology Commission of Shanghai Municipality [21ZR1473800]
  4. Ministry of Science and Higher Education of the Russian Federation [FEUZ-2020-0060]
  5. Jiangsu Innovative and Entrepreneurial Talents Project
  6. Science and Engineering Research Board (SERB), government of India
  7. Department of Science and Technology (DST), government of India
  8. Universita degli Studi dell'Aquila within the CRUI-CARE Agreement

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The emergence of Dirac semimetals, especially those with type-II Dirac fermions, has attracted significant attention due to their exotic quantum transport properties and topological states. NiTeSe has been identified as an ideal platform for type-II Dirac fermiology, featuring bulk Dirac fermions near the Fermi level and strong spin-polarized topological surface states. These findings are crucial for the realization of type-II Dirac fermions in photonics, spintronics, and optoelectronics.
The emergence of Dirac semimetals has stimulated growing attention, owing to the considerable technological potential arising from their peculiar exotic quantum transport related to their nontrivial topological states. Especially, materials showing type-II Dirac fermions afford novel device functionalities enabled by anisotropic optical and magnetotransport properties. Nevertheless, real technological implementation has remained elusive so far. Definitely, in most Dirac semimetals, the Dirac point lies deep below the Fermi level, limiting technological exploitation. Here, it is shown that kitkaite (NiTeSe) represents an ideal platform for type-II Dirac fermiology based on spin-resolved angle-resolved photoemission spectroscopy and density functional theory. Precisely, the existence of type-II bulk Dirac fermions is discovered in NiTeSe around the Fermi level and the presence of topological surface states with strong (approximate to 50%) spin polarization. By means of surface-science experiments in near-ambient pressure conditions, chemical inertness towards ambient gases (oxygen and water) is also demonstrated. Correspondingly, NiTeSe-based devices without encapsulation afford long-term efficiency, as demonstrated by the direct implementation of a NiTeSe-based microwave receiver with a room-temperature photocurrent of 2.8 mu A at 28 GHz and more than two orders of magnitude linear dynamic range. The findings are essential to bringing to fruition type-II Dirac fermions in photonics, spintronics, and optoelectronics.

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