Oxygen incorporation in directional solidification of photovoltaic silicon: Experimental facts and modeling

Oxygen, an usual impurity of photovoltaic silicon, is known to be detrimental for the electrical performances of this material. In this investigation, solidification experiments are performed in coated silica crucibles in order to study the influence of crucible size, crucible coating, argon flow and crucible material on silicon contamination by oxygen. In order to interpret the results, an analytical, semi-quantitative model is established taking into account two oxygen flows: the contamination flow at the crucible/silicon interface and the evacuation flow at the silicon free surface. (c) 2021 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Automated summary

This study investigates the influence of various factors on silicon contamination by oxygen in photovoltaic silicon, using solidification experiments in coated silica crucibles. An analytical, semi-quantitative model is established to interpret the results, considering two oxygen flows: contamination flow at the crucible/silicon interface and evacuation flow at the silicon free surface.