Journal
ACS NANO
Volume 16, Issue 1, Pages 295-305Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.1c06286
Keywords
asymmetric contacts; long-wavelength infrared; photothermoelectric effect; self-powered photodetection; polarization sensitive
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Funding
- National Research Foundation Singapore program [NRF-CRP18-2017-02, NRF-CRP22-2019-0007]
- Ministry of Education Tier 2 program [MOE2018-T2-1-176]
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PTE detectors offer the potential for ultra-broadband photodetection at room temperature without an external power supply, but their performance in the LWIR regime still requires improvement in terms of speed, responsivity, and noise level. A high-performance PTE photodetector based on low-symmetry palladium selenide (PdSe2) with asymmetric van der Waals contacts demonstrates excellent responsivity and response time, showing sensitivity to linear polarization angles.
Long-wavelength infrared (LWIR) photodetection is important for heat-seeking technologies, such as thermal imaging, all-weather surveillance, and missile guidance. Among various detection techniques, photothermoelectric (PTE) detectors are promising in that they can realize ultra-broadband photodetection at room temperature without an external power supply. However, their performance in terms of speed, responsivity, and noise level in the LWIR regime still needs further improvement. Here, we demonstrated a high-performance PTE photodetector based on low-symmetry palladium selenide (PdSe2) with asymmetric van der Waals contacts. The temperature gradient induced by asymmetric van der Waals contacts even under global illumination drives carrier diffusion to produce a photovoltage via the PTE effect. A responsivity of over 13 V/W, a response time of similar to 50 mu s, and a noise equivalent power of less than 7 nW/Hz(1/2) are obtained in the 4.6-10.5 mu m regime at room temperature. Furthermore, due to the anisotropic absorption of PdSe2, the detector exhibits a linear polarization angle sensitive response with an anisotropy ratio of 2.06 at 4.6 mu m and 1.21 at 10.5 mu m, respectively. Our proposed device architecture provides an alternative strategy to design high-performance photodetectors in the LWIR regime by utilizing van der Waals layered materials.
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