Related references
Note: Only part of the references are listed.Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis
Bhaswar Chakrabarti et al.
ACS NANO (2021)
Memristive Stateful Logic for Edge Boolean Computers
Young Seok Kim et al.
ADVANCED INTELLIGENT SYSTEMS (2021)
2D MoS2-Based Threshold Switching Memristor for Artificial Neuron
Durjoy Dev et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Highly Uniform Two-Terminal Artificial Synapses Based on Polycrystalline Hf0.5Zr0.5O2for Sparsified Back Propagation Networks
Yingming Lu et al.
ADVANCED ELECTRONIC MATERIALS (2020)
Alloying conducting channels for reliable neuromorphic computing
Hanwool Yeon et al.
NATURE NANOTECHNOLOGY (2020)
Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks
Shaochuan Chen et al.
NATURE ELECTRONICS (2020)
150 nm x 200 nm Cross-Point Hexagonal Boron Nitride-Based Memristors
Bin Yuan et al.
ADVANCED ELECTRONIC MATERIALS (2020)
Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV
Renjing Xu et al.
NANO LETTERS (2019)
Vacancy-Induced Synaptic Behavior in 2D WS2 Nanosheet-Based Memristor for Low-Power Neuromorphic Computing
Xiaobing Yan et al.
SMALL (2019)
A multi-level bipolar memristive device based on visible light sensing MoS2 thin film
Ujjal Das et al.
MATERIALS RESEARCH EXPRESS (2019)
Low voltage & controlled switching of MoS2-GO resistive layers based ReRAM for non-volatile memory applications
Sumit Choudhary et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2019)
Vertically Aligned WS2 Layers for High-Performing Memristors and Artificial Synapses
Mohit Kumar et al.
ADVANCED ELECTRONIC MATERIALS (2019)
Electronic synapses with near-linear weight update using MoS2/graphene memristors
Adithi Krishnaprasad et al.
APPLIED PHYSICS LETTERS (2019)
Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM
Jihang Lee et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides
Ruijing Ge et al.
NANO LETTERS (2018)
Synaptic Barristor Based on Phase-Engineered 2D Heterostructures
Woong Huh et al.
ADVANCED MATERIALS (2018)
NeuroSim: A Circuit-Level Macro Model for Benchmarking Neuro-Inspired Architectures in Online Learning
Pai-Yu Chen et al.
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (2018)
Neuro-Inspired Computing With Emerging Nonvolatile Memory
Shimeng Yu
PROCEEDINGS OF THE IEEE (2018)
Efficient and self-adaptive in-situ learning in multilayer memristor neural networks
Can Li et al.
NATURE COMMUNICATIONS (2018)
Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory
Xiaoning Zhao et al.
JOURNAL OF MATERIALS CHEMISTRY C (2018)
Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays
Yuhan Shi et al.
NATURE COMMUNICATIONS (2018)
Resistive random-access memory based on ratioed memristors
Miguel Angel Lastras-Montano et al.
NATURE ELECTRONICS (2018)
Electronic synapses made of layered two-dimensional materials
Yuanyuan Shi et al.
NATURE ELECTRONICS (2018)
Robust memristors based on layered two-dimensional materials
Miao Wang et al.
NATURE ELECTRONICS (2018)
3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications
Gina C. Adam et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Measuring the Edge Recombination Velocity of Monolayer Semiconductors
Peida Zhao et al.
NANO LETTERS (2017)
A novel artificial synapse with dual modes using bilayer graphene as the bottom electrode
He Tian et al.
NANOSCALE (2017)
Direct Studies on the Lithium-Storage Mechanism of Molybdenum Disulfide
Qingmei Su et al.
SCIENTIFIC REPORTS (2017)
Atomically Thin Femtojoule Memristive Device
Huan Zhao et al.
ADVANCED MATERIALS (2017)
Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices
Christoph Baeumer et al.
ACS NANO (2017)
Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets
Peifu Cheng et al.
NANO LETTERS (2016)
Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications
Kai Qian et al.
ADVANCED FUNCTIONAL MATERIALS (2016)
Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM
Stefano Ambrogio et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide
Gwang Hyuk Shin et al.
2D MATERIALS (2016)
Voltage divider effect for the improvement of variability and endurance of TaOx memristor
Kyung Min Kim et al.
SCIENTIFIC REPORTS (2016)
Training andoperation of an integrated neuromorphic network based on metal-oxide memristors
M. Prezioso et al.
NATURE (2015)
Metal oxide-resistive memory using graphene-edge electrodes
Seunghyun Lee et al.
NATURE COMMUNICATIONS (2015)
Pattern classification by memristive crossbar circuits using ex situ and in situ training
Fabien Alibart et al.
NATURE COMMUNICATIONS (2013)
Metal-Oxide RRAM
H. -S. Philip Wong et al.
PROCEEDINGS OF THE IEEE (2012)
Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene
Jun Yao et al.
NATURE COMMUNICATIONS (2012)
Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory
Shimeng Yu et al.
APPLIED PHYSICS LETTERS (2011)
An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation
Shimeng Yu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution
Gilberto Medeiros-Ribeiro et al.
NANOTECHNOLOGY (2011)
'Memristive' switches enable 'stateful' logic operations via material implication
Julien Borghetti et al.
NATURE (2010)
Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications
Ch. Walczyk et al.
JOURNAL OF APPLIED PHYSICS (2009)
Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La0.7Ca0.3MnO3/Pt heterostructures
D. S. Shang et al.
PHYSICAL REVIEW B (2006)
VLSI implementations of threshold logic - A comprehensive survey
V Beiu et al.
IEEE TRANSACTIONS ON NEURAL NETWORKS (2003)