4.8 Article

Impressive Thermoelectric Figure of Merit in Two-Dimensional Tetragonal Pnictogens: a Combined First-Principles and Machine-Learning Approach

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 49, Pages 59092-59103

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c18200

Keywords

tetragonal pnictogens; thermoelectric; anharmonic scattering; low lattice thermal conductivity; high figure of merit; machine-learning approach

Funding

  1. University of Calcutta

Ask authors/readers for more resources

This study systematically analyzed tetragonal monolayers of group-V elements using density functional theory combined with machine-learning approach, showing their potential for thermoelectric applications. The tetragonal pnictogens were found to have stable geometric structures, band gaps in the semiconductor regime, and low lattice thermal conductivity. Additionally, their high Seebeck coefficient and electrical conductivity, along with low thermal conductivity, resulted in a high thermoelectric figure of merit compared to standard materials.
Over the past decade, two-dimensional materials have gained a lot of interest due to their fascinating applications in the field of thermoelectricity. In this study, tetragonal monolayers of group-V elements (T-P, T-As, T-Sb, and T-Bi) are systematically analyzed in the framework of density functional theory in combination with the machine-learning approach. The phonon spectra, as well as the strain profile, dictate that these tetragonal structures are geometrically stable as well as they are potential candidates for experimental synthesis. Electronic analysis suggests that tetragonal pnictogens offer a band gap in the semiconducting regime. Thermal transport characteristics are investigated by solving the semiclassical Boltzmann transport equation. Exceptionally low lattice thermal conductivity has been observed as the atomic number increases in the group. The high Seebeck coefficient and electrical conductivity as well as the low thermal conductivity of T-As, T-Sb, and T-Bi lead to the generation of a very high thermoelectric figure of merit as compared to standard thermoelectric materials. Furthermore, the thermoelectric conversion efficiency of these materials has been observed to be much higher, which ensures their implications in thermoelectric device engineering.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available