4.8 Article

Effect of Defects on Optical, Electronic, and Interface Properties of NiO/SnO2 Heterostructures: Dual-Functional Solar Photocatalytic H2 Production and RhB Degradation

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 50, Pages 60002-60017

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c19544

Keywords

dual functional; photocatalysis; interface; bandgap; recombination

Funding

  1. SERB-DST, Government of India [EMR/2016/003370]

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The use of defect engineering in NiO/SnO2 nanoparticles has enhanced photocatalytic activity, achieving a higher H-2 production rate than previously reported. Maintaining optimal defect concentration is crucial for achieving higher photocatalytic efficiencies.
Photocatalytic H-2 evolution and organic pollutant oxidation have witnessed a radical surge in recent times. However, this integration demands spatial charge separation and unique interface properties for a trade-off between oxidation and reduction reactions. In the current work, defect engineering of NiO/SnO2 nanoparticles aided in altering the optoelectronics and interface properties and enhanced photocatalytic activity. After annealing the catalysts in a N-2 atmosphere, the hydroxyl groups were replaced by water molecules through surface modification. The photoexcited holes accumulated on SnO2 break the water molecules and facilitate the reduction of protons on NiO; this is known as spatial separation. Meanwhile, direct hole oxidation, an oxygen reduction reaction, ensures the degradation activity in this 2-fold system. By defect engineering, the limitations of SnO2 such as higher H2O adsorption, wide bandgap (reduced from 3.02 to 1.88 eV), and electronic properties were addressed. The H-2 production in the current work has attained a value of 3732 mu mol/(g h), which is 2.9 times that of the previous best reported under sunlight. Recyclability tests confirmed the stability of vacancies by promoting the reoxidation of defect states during photocatalytic activity. Additionally, efforts were made to study the effect of defect density on the photocurrent, the electrical resistance, and the mechanism of photocatalytic reactions. Electrochemical characterizations, UPS, XPS, UV-DRS, and PL were employed to understand the influence of defects on the bandgap, charge recombination, charge transport, charge carrier lifetime, and the interface properties that are responsible for photocatalytic activity. In this regard, it was understood that maintaining the optimal defect concentration is important for higher photocatalytic efficiencies, as the defect optimality preserves key photocatalytic properties. Apart from characterizations, the photocatalytic results suggest that excess defect density triggers the undesired thermodynamically favored back reactions, which greatly hampered the H-2 yield of the process.

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