Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 46, Pages 55318-55327Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c15942
Keywords
lateral photovoltaic effect; position-sensitive detector; 3C-SiC/Si; heterojunction; harsh environment
Funding
- Australian Research Council [DE210100852]
- USQ Capacity Building Grants 2020
- Aus4Innovation Grants
- Australian Research Council [DE210100852] Funding Source: Australian Research Council
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This study successfully generated a charge carrier gradient in a 3C-SiC/Si heterojunction with an asymmetric electrode configuration, resulting in a high lateral photovoltage. The potential of lateral photovoltaic and self-powered devices was demonstrated. Additionally, by explaining the generation and separation of electron-hole pairs under light illumination and charge carrier diffusion theory, the working mechanism and behavior of the lateral photovoltaic effect were further explored.
It is critical to investigate the charge carrier gradient generation in semiconductor junctions with an asymmetric configuration, which can open a new platform for developing lateral photovoltaic and self-powered devices. This paper reports the generation of a charge carrier gradient in a 3C-SiC/Si heterojunction with an asymmetric electrode configuration. 3C-SiC/Si heterojunction devices with different electrode widths were illuminated by laser beams (wavelengths of 405, 521, and 637 nm) and a halogen bulb. The charge carrier distribution along the heterojunction was investigated by measuring the lateral photovoltage generated when the laser spot scans across the 3C-SiC surface between the two electrodes. The highest lateral photovoltage generated is 130.58 mV, measured in the device with an electrode width ratio of 5 and under 637 nm wavelength and 1000 mu W illumination. Interestingly, the lateral photovoltage was generated even under uniform illumination at zero bias, which is unusual for the lateral photovoltage, as it can only be generated when unevenly distributed photogenerated charge carriers exist. In addition, the working mechanism and uncovered behavior of the lateral photovoltaic effect are explained based on the generation and separation of electron-hole pairs under light illumination and charge carrier diffusion theory. The finding further elaborates the underlying physics of the lateral photovoltaic effect in nano-heterojunctions and explores its potential in developing optoelectronic sensors.
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