4.8 Article

Ternary Oxide CuWO4/BiVO4/FeCoOx Films for Photoelectrochemical Water Oxidation: Insights into the Electronic Structure and Interfacial Band Alignment

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 14, Issue 20, Pages 22858-22869

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c21001

Keywords

photoelectrochemical water oxidation; CuWO4; BiVO4; FeCoOx; magnetron sputtering deposition; heterojunction; water splitting

Funding

  1. Sao Paulo Research Foundation (FAPESP) [2017/18716-3, 2019/15434-2, 2019/18724-1]
  2. Brazilian National Council for Scientific and Technological Development CNPq [150979/2020-7]
  3. National Centre for Energy and Materials Research (CNPEM)

Ask authors/readers for more resources

In this study, a CuWO4/BiVO4/FeCoOx film was deposited on a photoanode using homemade ceramic targets and RF-magnetron sputtering. An ultrathin layer of amorphous FeCoOx cocatalyst was deposited to boost the performance of the photoanode, resulting in a triple CuWO4/BiVO4/FeCoOx heterojunction with improved charge separation and transport as well as enhanced photoelectrochemical stability.
Photoelectrochemical (PEC) water oxidation using ternary oxide systems has been considered a promising approach for investigating the effective utilization of sunlight and the production of green fuel. Herein, we report a ternary-oxide-based CuWO4/BiVO4/FeCoOx film deposited entirely by RF-magnetron sputtering using homemade ceramic targets. Our CuWO4/BiVO4 photoanode exhibits a significant photocurrent density of 0.82 mA cm(-2) at 1.23 V vs RHE under AM 1.5G illumination, which is a record 382% increase compared to that of the bare CuWO4 film. To further boost the PEC performance, we deposited an ultrathin layer of amorphous FeCoOx cocatalyst, resulting in a triple CuWO4/BiVO4/FeCoOx heterojunction with a significant reduction in onset potential and a 500% increase in the photocurrent density of bare CuWO4. Experimental and theoretical approaches were used to provide insights into the interfacial band alignment and photoinduced charge carrier pathway across heterojunctions. Our results reveal noticeable interface potential barriers for charge carriers at the CuWO4/BiVO4 heterojunction, potentially limiting its application in tandem systems. Conversely, the deposition of the FeCoOx ultrathin layer over the CuWO4/BiVO4 heterojunction induces a p-n junction on the BiVO4/FeCoOx interface, which, when combined with the abundant FeCoOx oxygen vacancies, results in improved charge separation and transport as well as enhanced photoelectrochemical stability. Our study provides a feasible strategy for producing photocatalytic heterojunction systems and introduces simple tools for investigating interface effects on photoinduced charge carrier pathways for PEC water splitting.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available