4.8 Article

Thermal- and Light-Induced Evolution of the 2D/3D Interface in Lead-Halide Perovskite Films

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 14, Issue 30, Pages 34180-34188

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c09695

Keywords

2D/3D perovskites; phenethylammonium ion; photoluminescence; thermal stress; moisture instability; photostability; halide perovskite degradation

Funding

  1. European Union project PERT PV [763977]
  2. Distinguished Scientist Fellowship Program (DSFP) of King Saud University, Riyadh, Saudi Arabia

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The instability of halide perovskites is a major challenge in their commercial applications, and forming 2D/3D interfaces is a popular method to improve device stability. However, diffusion and structural changes still occur under accelerated aging conditions.
The instability of halide perovskites toward moisture is one of the main challenges in the field that needs to be overcome to successfully integrate these materials in commercially viable technologies. One of the most popular ways to ensure device stability is to form 2D/3D interfaces by using bulky organic molecules on top of the 3D perovskite thin film. Despite its promise, it is unclear whether this approach is able to avoid 3D bulk degradation under accelerated aging conditions, i.e., thermal stress and light soaking. In this regard, it is crucial to know whether the interface is structurally and electronically stable or not. In this work, we use the bulky phenethylammonium cation (PEA+) to form 2D layers on top of 3D single-and triple-cation halide perovskite films. The dynamical change of the 2D/3D interface is monitored under thermal stress and light soaking by in situ photoluminescence. We find that under pristine conditions the large organic cation diffuses only in 3D perovskite thin films of poor structural stability, i.e., single-cation MAPbI(3). The same diffusion and a dynamical change of the crystalline structure of the 2D/3D interface are observed even on high-quality 3D films, i.e., triple-cation MAFACsPbI(3), upon thermal stress at 85 ? and light soaking. Importantly, under such conditions, the resistance of the thin film to moisture is lost.

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