4.8 Article

Enhanced Self-Assembled Monolayer Surface Coverage by ALD NiO in p-i-n Perovskite Solar Cells

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 14, Issue 1, Pages 2166-2176

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c15860

Keywords

perovskite solar cells; atomic layer deposition; nickel oxide; indium tin oxide; self-assembled monolayer; surface coverage

Funding

  1. Solliance
  2. Dutch province of Noord-Brabant
  3. BMBF [03SF0540]
  4. TKI Urban Energy [PVPress TEUE 118010]

Ask authors/readers for more resources

Metal halide perovskites have excellent electronic properties, and recent advancements in device performance and stability of perovskite solar cells have been achieved with the application of self-assembled monolayers (SAMs). By introducing an intermediate layer of NiO between ITO and SAM, the coverage and homogeneity of SAMs on the substrate can be improved, leading to enhanced device performance. The combination of NiO and SAM results in a more than 20% efficient champion device with a narrower distribution of performance.
Metal halide perovskites have attracted tremendous attention due to their excellent electronic properties. Recent advancements in device performance and stability of perovskite solar cells (PSCs) have been achieved with the application of self-assembled monolayers (SAMs), serving as stand-alone hole transport layers in the p-i-n architecture. Specifically, phosphonic acid SAMs, directly functionalizing indium-tin oxide (ITO), are presently adopted for highly efficient devices. Despite their successes, so far, little is known about the surface coverage of SAMs on ITO used in PSCs application, which can affect the device performance, as non-covered areas can result in shunting or low open-circuit voltage. In this study, we investigate the surface coverage of SAMs on ITO and observe that the SAM of MeO-2PACz ([2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid) inhomogeneously covers the ITO substrate. Instead, when adopting an intermediate layer of NiO between ITO and the SAM, the homogeneity, and hence the surface coverage of the SAM, improve. In this work, NiO is processed by plasma-assisted atomic layer deposition (ALD) with Ni(MeCp)(2) as the precursor and O-2 plasma as the co-reactant. Specifically, the presence of ALD NiO leads to a homogeneous distribution of SAM molecules on the metal oxide area, accompanied by a high shunt resistance in the devices with respect to those with SAM directly processed on ITO. At the same time, the SAM is key to the improvement of the open-circuit voltage of NiO + MeO-2PACz devices compared to those with NiO alone. Thus, the combination of NiO and SAM results in a narrower distribution of device performance reaching a more than 20% efficient champion device. The enhancement of SAM coverage in the presence of NiO is corroborated by several characterization techniques including advanced imaging by transmission electron microscopy (TEM), elemental composition quantification by Rutherford backscattering spectrometry (RBS), and conductive atomic force microscopy (c-AFM) mapping. We believe this finding will further promote the usage of phosphonic acid based SAM molecules in perovskite PV.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available