Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 39, Pages 46566-46576Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c11335
Keywords
perovskite solar cell; power conversion eficiency; blade-coating; defect passivation; crystal cross-linkers
Funding
- National Natural Science Foundation of China [61605064, 61705090, 11804117]
- Guangdong Province Natural Science Fund [2016A03031008, 2020A1515010853]
- Opening Project of Key Laboratory of Materials Processing and Mold, Zhengzhou University
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The study investigated the passivation effects of four organic pi-conjugated phenylboronic acid molecules on perovskite materials, finding that addition of 3-amino phenylboronic acid (3a) significantly improved the photovoltaic performance of solar devices. Devices treated with 3a showed the best passivation effect, leading to increased open-circuit voltage and power conversion efficiency.
High-density electronic defects at the surfaces and grain boundaries (GBs) of perovskite materials are the major contributor to suppressing the power conversion efficiency (PCE) and deteriorating the long-term stability of the solar devices. Hence, the judicious selection of chemicals for the passivation of trap states has been regarded as an effective strategy to enhance and stabilize the photovoltaic performance of solar devices. Here, we systematically investigated the passivation effects of four organic pi-conjugated phenylboronic acid molecules: phenylboronic acid, 2-amino phenylboronic acid (2a), 3-amino phenylboronic acid (3a), and 4-amino phenylboronic acid (4a) by adding them into the methylammonium lead iodide (MAPbI(3)) precursor solution. We found that solar devices with an optimized 5% (mol %) 3a treatment achieve the best passivation effect due to the strong cross-linking ability via hydrogen bonding interactions between the I of the [PbI6](4-) octahedral network of perovskite films and the cross-linking terminal groups [-B(OH)(2), (-NH2)] of 3a. Moreover, the lone pair of electrons on the N atom of an amino group of 3a can passivate the uncoordinated Pb-2(+) defects at the surface/GBs. As a result, the 3a-passivated device shows a high open-circuit voltage of 1.13 V, which is a 14.1% improvement compared to the control device (0.99 V). Moreover, the reduced defect density and improved carrier lifetimes enabled a high PCE of 18.89% in our blade-coated champion inverted structure of MAPbI(3) solar cells, with improved long-term stability.
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