Dielectric Properties of P3BT Doped ZrY2O3/CoZrY2O3 Nanostructures for Low Cost Optoelectronics Applications

In the present research work, low cost, high corrosion resistance, light weight films of ZrY2O3/CoZrY2O3 nanostructures (NS) (1:1 molar ratio) doped with P3BT (poly-3-butyl thiophene) (3 wt%, 5 wt% and 8 wt%) were synthesized by precipitation method and characterized by scanning electron microscopy (SEM), SEM-EDX, UV-visible, X-ray photoelectron spectroscopy (XPS), Fourier infrared spectroscopy (FT-IR), X-ray diffraction (XRD) spectroscopic analysis. The fabricated nanostructures studied for their dielectric and optoelectronic properties. XRD diffraction pattern indicated mixed cubic and hexagonal structure of the material and FT-IR spectra showed shift in the peak position to higher wavenumber with the increased addition of P3BT to the NS. Chemical composition analysis showed binding energies of P3BT: ZrY2O3/CoZrY2O3 NS with peak centred at 162.2 eV, 156.6 eV, 182.7 eV, 180.4 eV, 794.6 eV and 778.9 eV corresponds to Y 3d(3/2), Y 3d(5/2), Zr 3d(3/2), Zr 3d(5/2), Co 2p(3/2) and Co 2p(5/2) respectively. Dielectric properties for 8 wt% P3BT doped NS indicated the increase of dielectric constant (9.7) with dielectric loss of 0.018 for 250 nm thickness of the NS. Electrical conductivity as 45.8%, 47.1% and 52.4% with the increase content of P3BT: ZrY2O3/ZrCoY2O3 NS to 8 wt%. Optical characteristics results showed that absorption has been increased to 48% and energy gap decreased to 12.5%, charge mobility of 2056 cm(2)/V/S with similar to 10 k Omega/cm(2) sheet resistance with 90% of optical transmittance. The NS can be used to fabricate the electronic devices like light emitting diodes, field effect transistors, photovoltaic cells and have prominent applications in photonic and electronic industries.

Automated summary

Low cost, high corrosion resistance, and light weight films of ZrY2O3/CoZrY2O3 nanostructures doped with P3BT were successfully synthesized and characterized in this study. The nanostructures showed promising dielectric and optoelectronic properties, indicating potential applications in electronic devices such as LEDs, FETs, and solar cells.