4.7 Article

Dopant Effect on Lithiation/Delithiation of Highly Crystalline Silicon Synthesized Using the Czochralski Process

Journal

ACS APPLIED ENERGY MATERIALS
Volume 4, Issue 8, Pages 7922-7929

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsaem.1c01192

Keywords

Li-ion batteries; silicon; dopant; lithiation; Czochralski method

Funding

  1. Japan Society for the Promotion of Science (JSPS) [20H02840, 18K14317]
  2. Grants-in-Aid for Scientific Research [20H02840, 18K14317] Funding Source: KAKEN

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The research on using P or B doped silicon materials as negative electrode materials can effectively improve their electrical conductivity and mechanical properties, enabling lithium insertion reactions to occur at higher potentials and improving cycling performance.
The huge theoretical capacity of 3580 mA h g(-1) based on alloying reactions with Li strongly motivates the use of Si as a negative electrode material in the construction of Li-ion batteries with high energy density. However, its poor electrical conductivity and low Li+ diffusion coefficients as well as the significant volume change in Si during lithiation/ delithiation are the bottlenecks for practical application. As one typical method for improving their properties, impurity doping into Si has been considered; however, many of them were amorphous or the impurity concentration against depth direction was not homogeneous, which has complicated the understanding of the effect of impurities on the lithiation/ delithiation of Si. In this work, we synthesized Si ingots heavily doped with P (2000 ppm) or B (1600 ppm) as a dopant using the Czochralski method, which overcomes the above issues. In galvanostatic charge/discharge conditions using slurry-type electrodes, the electrical conductivity increased by 108 times compared to that of the undoped Si. The P- (0.119 V) and B-doping (0.126 V) allowed the Li-insertion reaction to occur at higher potentials compared to undoped Si (0.113 V). Even when using 5 vol % fluoroethylene carbonate as a film-forming additive and suppressing an excess volume change in Si during lithiation by the limitation of a charge capacity of 1000 mA h g(-1), the undoped Si showed poor cyclability. In contrast, the optimized condition maximized the effect of the improved electrical conductivity and the mechanical properties and thereby enabled the P-doped Si to achieve an excellent performance for more than 300 cycles. Considering the softer properties and the greater fracture toughness of the P-doped Si (1514 HV and P-Si: 363.6 kJ mol(-1)) than those of B-doped Si (1787 HV and B-Si: 317 +/- 12 kJ mol(-1)), the mechanical properties and fracture toughness, rather than electrical conductivity, make a significant contribution.

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