4.6 Article

Transport anomalies in the layered compound BaPt4Se6

Journal

NPJ QUANTUM MATERIALS
Volume 6, Issue 1, Pages -

Publisher

NATURE PORTFOLIO
DOI: 10.1038/s41535-021-00382-x

Keywords

-

Funding

  1. US Air Force Office of Scientific Research [FA9550-19-1-0037]
  2. University of Texas at Dallas Office of Research
  3. Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF9470]
  4. Robert A. Welch Foundation [C-2024]
  5. Alfred P. Sloan Foundation
  6. U.S. DOE Office of Science [DE-AC02-05CH11231]
  7. [NSF- DMREF- 1921581]
  8. [NSF-DMR-1700030]
  9. [NSF-DMREF-1921847]
  10. [NSF-DMR-1921798]

Ask authors/readers for more resources

The layered ternary selenide BaPt4Se6 features sesqui-selenide Pt2Se3 layers sandwiched by Ba atoms, resulting in a mixed-valence compound with peculiar electrical transport properties and a hidden state below 5 K. Temperature-dependent measurements reveal distinct anomalies, but no dramatic reconstruction of the electronic structure up to 200 K according to angle-resolved photoemission spectroscopy.
We report a layered ternary selenide BaPt4Se6 featuring sesqui-selenide Pt2Se3 layers sandwiched by Ba atoms. The Pt2Se3 layers in this compound can be derived from the Dirac-semimetal PtSe2 phase with Se vacancies that form a honeycomb structure. This structure results in a Pt (VI) and Pt (II) mixed-valence compound with both PtSe6 octahedra and PtSe4 square net coordination configurations. Temperature-dependent electrical transport measurements suggest two distinct anomalies: a resistivity crossover, mimic to the metal-insulator (M-I) transition at similar to 150 K, and a resistivity plateau at temperatures below 10 K. The resistivity crossover is not associated with any structural, magnetic, or charge order modulated phase transitions. Magnetoresistivity, Hall, and heat capacity measurements concurrently suggest an existing hidden state below 5 K in this system. Angle-resolved photoemission spectroscopy measurements reveal a metallic state and no dramatic reconstruction of the electronic structure up to 200 K.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available