Defects in CsPbX3 Perovskite: From Understanding to Effective Manipulation for High-Performance Solar Cells

The rapid development of all inorganic metal perovskite (CsPbX3, X represents halogen) materials holds great promise for top-cells in tandem junctions due to their glorious thermal stability and continuous adjustable band gap in a wide range. Due to the presence of defects, the power conversion efficiency (PCE) of CsPbX3 perovskite solar cells (PSCs) is still substantially below the Shockley-Queisser (SQ) limit. Therefore, it is imperative to have an in-depth understanding of the defects in PSCs, thus to evaluate their impact on device performances and to develop corresponding strategies to manipulate defects in PSCs for further promoting their photoelectric properties. In this review, the latest progress in defect passivation in the CsPbX3 PSCs field is summarized. Starting from the effect of non-radiative recombination on open circuit voltage (V-oc) losses, the defect physics, tolerance, self-healing, and the effect of defects on the photovoltaic properties are discussed. Some techniques to identify defects are compared based on quantitative and qualitative analysis. Then, passivation manipulation is discussed in detail, the defect passivation mechanisms are proposed, and the passivation agents in CsPbX3 thin films are classified. Finally, directions for future research about defect manipulation that will push the field to progress forward are outlined.

Automated summary

The rapid development of inorganic metal perovskite materials, such as CsPbX3, shows great potential for top-cells in tandem junctions due to their thermal stability and adjustable band gap. However, the efficiency of CsPbX3 perovskite solar cells still needs improvement due to defects. Research on defect passivation in CsPbX3 PSCs is summarized, including discussions on defect physics, tolerance, self-healing, and techniques for defect identification and manipulation for enhancing photoelectric properties.