Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution

Electric-field-induced second harmonic generation can be used to measure the in-plane electric field in gallium nitride high-electron-mobility transistors and probe how dopants influence the electric field distribution. Electric fields drive the degradation of wide-bandgap semiconductor devices. However, directly mapping the electric field inside an active device region remains challenging. Here we show that electric-field-induced second harmonic generation can be used to map the electric field in the device channel of GaN-based high-electron-mobility transistors at submicrometre resolution. To illustrate the capabilities of the approach, we use it to examine the impact of carbon impurities in the epitaxial buffer layer of a device. Carbon is a p dopant in GaN, and small changes in its concentration can dramatically change the bulk Fermi level, sometimes resulting in a floating buffer that is 'short-circuited' to the device channel via dislocations. Our measurements show that very different electric field distributions can occur in devices with different carbon concentrations, despite them having similar device terminal characteristics. We also show that dislocation-related leakage paths can lead to inhomogeneity in the electric field.

Automated summary

Electric-field-induced second harmonic generation is utilized to map the electric field distribution in the device channel of GaN-based high-electron-mobility transistors. The study shows that changes in carbon dopant concentration can significantly affect the electric field distribution in the devices, highlighting the role of dopants in altering the device characteristics. Additionally, dislocation-related leakage paths can lead to inhomogeneity in the electric field within the devices.