Journal
NATURE ELECTRONICS
Volume 4, Issue 6, Pages 380-381Publisher
NATURE RESEARCH
DOI: 10.1038/s41928-021-00604-x
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Boron arsenide can be used as a high-thermal-conductivity cooling substrate in gallium nitride power devices.
Boron arsenide could be used as a high-thermal-conductivity cooling substrate in gallium nitride power devices.
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