4.8 Article

Logic gates based on neuristors made from two-dimensional materials

Journal

NATURE ELECTRONICS
Volume 4, Issue 6, Pages 399-404

Publisher

NATURE RESEARCH
DOI: 10.1038/s41928-021-00591-z

Keywords

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Funding

  1. National Natural Science Foundation of China [61925402, 61851402, 62090032]
  2. Science and Technology Commission of Shanghai Municipality [19JC1416600]
  3. Shanghai Education Development Foundation
  4. Shanghai Municipal Education Commission Shuguang Program [18SG01]
  5. Key Research Program of the Chinese Academy of Sciences [XDPB22]
  6. Strategic Priority Research Program of the Chinese Academy of Sciences [XDB44000000]

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By leveraging the intrinsic polarity of two-dimensional materials, single neuristors can function as XNOR, NOR, OR, and AND logic gates, showcasing a versatile capability for logic operations.
A single biological neuron can efficiently perform Boolean operations. Artificial neuromorphic systems, on the other hand, typically require several devices to complete a single operation. Here, we show that neuristors that exploit the intrinsic polarity of two-dimensional materials can perform logic operations in a single device. XNOR gates can be made using ambipolar tungsten diselenide (WSe2), NOR gates using p-type black phosphorus, and OR and AND gates using n-type molybdenum disulfide (MoS2) of different thicknesses. To illustrate the potential of the neuristors, we fabricate logic half-adder and parity-checker circuits using a WSe2 neuristor and a MoS2 neuristor in a two-transistor two-resistor configuration, offering an area saving of 78% compared to circuits based on MoS2 gates in a traditional design. We also propose a binary neural network that is based on a three-dimensional XNOR array, which simulations show should offer an energy efficiency of 622.35 tera-operations per second per watt and a power consumption of 7.31 mW. By using two-dimensional materials with different polarities, single neuristors can act as XNOR, NOR, OR and AND logic gates.

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